fyp2010dn ? schottky barrier rectifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fyp2010dn rev. b1 1 august 2009 fyp2010dn schottky barrier rectifier features ? low forward voltage drop ? high frequency properties and switching speed ? guard ring for over-voltage protection absolute maximum ratings t a =25 c unless otherwise noted thermal characteristics electrical characteristics (per diode) * pulse test: pulse width=300 s, duty cycle = 2% symbol parameter value units v rrm maximum repetitive reverse voltage 100 v v r maximum dc reverse voltage 100 v i f(av) average rectified forward current @ t c = 120 c20 a i fsm non-repetitive peak surge current (per diode) 60hz single half-sine wave 150 a t j, t stg operating junction and stor age temperature -65 to +150 c symbol parameter value units r jc maximum thermal resistance, junction to case (per diode) 1.7 c/w symbol parameter value units v fm * maximum instantaneous forward voltage i f = 10a i f = 10a i f = 20a i f = 20a t c = 25 c t c = 125 c t c = 25 c t c = 125 c 0.77 0.65 - 0.75 v i rm * maximum instantaneous reverse current @ rated v r t c = 25 c t c = 125 c 0.1 20 ma 3.anode 1.anode 2. cathode to-220 1 2 3
fyp2010dn ? schottky barrier rectifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fyp2010dn rev. b1 2 typical performance characteristics figure 1. typical forward voltage characteristics (per diode) figure 3. typical junction capacitance (per diode) figure 5. forward current derating curve figure 2. typical reverse current vs. reverse voltage (per diode) figure 4. thermal impedance characteristics (per diode) figure 6. non-repetive surge current (per diode) 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 t j =125 o c t j =75 o c t j =25 o c forward voltage drop, v f [v] forward current, i f [a] 0 20406080100 80 90 100 200 300 400 500 600 700 800 900 1000 t j =25 o c juntion capacitance, c j [pf] reverse voltage, v r [v] 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 dc average forward current, i f(av) [a] case temperature, t c [ o c] 20 40 60 80 100 1e-3 0.01 0.1 1 10 t j =125 o c t j =75 o c t j =25 o c reverse current, i r [ma] reverse voltage, v r [v] 100 1m 10m 100m 1 10 1 10 transient thermal impedance [ o c/w] pulse duration [s] 1 10 100 0 50 100 150 200 250 max. forward surge current, i fsm [a] number of cycles @ 60hz
fyp2010dn ? schottky barrier rectifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fyp2010dn rev. b1 3 physical dimensions to-220
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